Voltage-current Characteristics of a Pn-diode from a Drift-diiusion Model with Nonlinear Diiusion
نویسنده
چکیده
A drift-diiusion model with density-dependent diiusion coee-cients for the ow of electrons and holes in a semiconductor crystal is considered. It contains a new class of models for recombination-generation eeects as well as boundary conditions modelling Ohmic contacts. Existence of steady state solutions is proven. For a planar pn-diode the qualitative properties of steady state solutions in dependence on the applied voltage is examined and, in particular, voltage-current characteristics are discussed.
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